KTD1304 datasheet(1/2 Pages) HTSEMI

Part #	KTD1304

Description	TRANSISTOR (NPN)

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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FEATURES

·High emitter-base voltage

·low on resistance

MARKING: MAX

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

25

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

12

V

IC

Collector Current -Continuous

0.3

A

PC

Collector Power Dissipation

0.2

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=100μA, IE=0

25

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA, IC=0

12

V

Collector cut-off current

ICBO

VCB=25 V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=12V, IC=0

0.1

μA

hFE(FOR)

VCE=2V, IC=4 mA

200

1000

DC current gain

hFE(REV)

VCE= 2V, IC= 4mA

20

Collector-emitter saturation voltage

VCE(sat)

IC= 100mA, IB=10 mA

0.25

V

Base-emitter saturation voltage

VBE(sat)

IC= 100mA, IB=10mA

1

V

Transition frequency

fT

VCE=10V, IC= 1mA

f=100MHz

60

MHz

output capacitance

Cob

VCB=10V,IE=0,f=1MHz

10

pF

On resistance

R(on)

Vin=0.3V,IB=1mA,f=1KHZ

0.6

Ω

SOT-23

1. BASE

2. EMITTER

3.COLLECTOR

KTD1304

TRANSISTOR (NPN)

１　

Ｄａｔｅ：２０１１／０５

www.htsemi.com

semiconductor

JinYu

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KTD1304 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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