BFR182W datasheet(2/7 Pages) SIEMENS | NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

Part No.	BFR182W

Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 7 page

Semiconductor Group

2

Dec-11-1996

BFR 182W

Electrical Characteristics at

TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO

12

-

V

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

ICES

-

100

µA

Collector-base cutoff current

VCB = 10 V, IE = 0

ICBO

-

100

nA

Emitter-base cutoff current

VEB = 1 V, IC = 0

IEBO

-

1

µA

DC current gain

IC = 10 mA, VCE = 8 V

hFE

50

100

200

-

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BFR182W Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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