BFR182W datasheet(6/7 Pages) SIEMENS | NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

Part No.	BFR182W

Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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6 / 7 page

Semiconductor Group

6

Dec-11-1996

BFR 182W

Collector-base capacitance

Ccb = f (VCB)

VBE = vbe = 0, f = 1MHz

0

4

8

12

16

V

22

V

R

0.0

0.1

0.2

0.3

0.4

0.5

0.6

pF

0.8

C

cb

Transition frequency

fT = f (IC)

VCE = Parameter

0

5

10

15

mA

25

I

C

0

1

2

3

4

5

6

7

8

GHz

10

f

T

10V

8V

5V

3V

2V

1V

0.7V

Power Gain

Gma, Gms = f(IC)

f = 0.9GHz

VCE = Parameter

0

4

8

12

16

20

mA

26

I

C

8

10

12

14

16

dB

20

G

10V

3V

2V

1V

0.7V

Power Gain

Gma, Gms = f(IC)

f = 1.8GHz

VCE = Parameter

2

6

10

14

18

mA

26

I

C

0

2

4

6

8

10

dB

14

G

10V

3V

2V

1V

0.7V

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BFR182W Datasheet(PDF) 6 Page - Siemens Semiconductor Group

BFR182W Datasheet(HTML) 6 Page - Siemens Semiconductor Group

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