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BFR181W Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BFR181W
Description  NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFR181W Datasheet(HTML) 3 Page - Siemens Semiconductor Group

   
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Semiconductor Group
3
Dec-11-1996
BFR 181W
Electrical Characteristics at
TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 8 V, f = 500 MHz
fT
6
8
-
GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
-
0.32
0.5
pF
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Cce
-
0.22
-
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
-
0.3
-
Noise figure
IC = 2 mA, VCE = 8 V, ZS = ZSopt
f = 900 MHz
f = 1.8 GHz
F
-
-
1.8
1.45
-
-
dB
Power gain
1)
IC = 5 mA, VCE = 8 V, f = 900 MHz
ZS = ZSopt, ZL = ZLopt
Gms
-
18.5
-
Power gain
2)
IC = 5 mA, VCE = 8 V, f = 1.8 GHz
ZS = ZSopt, ZL = ZLopt
Gma
-
13
-
Transducer gain
IC = 5 mA, VCE = 8 V, ZS =ZL= 50 Ω
f = 900 MHz
f = 1.8 GHz
|
S21e|2
-
-
9.5
15
-
-
1)
Gms = |S21/S12|
2)
Gma = |S21/S12| (k-(k2-1)1/2)


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