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BFR106 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BFR106 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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Semiconductor Group 1 Dec-11-1996 BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 (PNP) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 106 R7s Q62702-F1219 1 = B 2 = E 3 = C 4 = E SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 100 mA Base current IB 12 Total power dissipation TS ≤ 73 °C Ptot 700 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) RthJS ≤ 110 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. |
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