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BFR106 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BFR106
Description  NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BFR106 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
1
Dec-11-1996
BFR 106
NPN Silicon RF Transistor
• For low noise, high-gain amplifiers
• For linear broadband amplifiers
• Special application: antenna amplifiers
• Complementary type: BFR 194 (PNP)
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFR 106
R7s
Q62702-F1219
1 = B
2 = E
3 = C
4 = E
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCEO
15
V
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
3
Collector current
IC
100
mA
Base current
IB
12
Total power dissipation
TS ≤ 73 °C
Ptot
700
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 110
K/W
1)
TS is measured on the collector lead at the soldering point to the pcb.


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