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BFQ82 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BFQ82
Description  NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
AC Characteristics
Unit
Values
Parameter
Symbol
min.
typ.
max.
Power gain
IC = 30 mA, VCE = 8 V, f = 1 GHz, Z0 = 50
IC = 30 mA, VCE = 8 V, f = 2 GHz, Z0 = 50
Gma1)
17
11
GHz
Transition frequency
IC = 5 mA, VCE = 8 V, f = 500 MHz
IC = 30 mA, VCE = 8 V, f = 500 MHz
fT
3.6
8
Collector-emitter capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Cce
0.4
Output capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Cobs
1.0
dB
Noise figure
IC = 5 mA, VCE = 8 V, f = 10 MHz, ZS = 75
IC = 30 mA, VCE = 8 V, f = 800 MHz, ZS = ZSopt
IC = 10 mA, VCE = 8 V, f = 2 GHz, ZS = ZSopt
F
0.7
1.6
2.3
pF
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
Ccb
0.62
Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Cibo
2.5
Transducer gain
IC = 30 mA, VCE = 8 V, f = 1 GHz, Z0 = 50
I S21e I 2
13.5
mV
Linear output voltage
two-tone intermodulation test
IC = 40 mA, VCE = 8 V, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50
Vo1 = Vo2
280
dBm
Third order intercept point
IC = 40 mA, VCE = 8 V, f = 800 MHz
IP3
–32
1)
S21e
S12e
(k –
k 2–1)
BFQ 82




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