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BFQ82 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BFQ82
Description  NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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NPN Silicon RF Transistor
BFQ 82
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type
Marking
Package1)
Pin Configuration
BFQ 82
Q62702-F1189
82
Cerec-X
1
2
3
4
B
E
C
E
Ordering Code
(tape and reel)
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
12
V
Emitter-base voltage
VEB0
2
Collector current
IC
80
mA
Collector-base voltage
VCB0
20
Base current
IB
10
Junction temperature
Tj
175
˚C
Ambient temperature range
TA
– 65 … + 175
Total power dissipation, TS
95 ˚C3)
Ptot
500
mW
Storage temperature range
Tstg
– 65 … + 175
Thermal Resistance
Junction - ambient2)
Rth JA
240
K/W
Junction - case3)
Rth JS
160
Collector-emitter voltage, VBE = 0
VCES
20
Peak collector current, f
10 MHz
ICM
80
Peak base current, f
10 MHz
IBM
10
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
× 16.7 mm × 0.7 mm.
3)
TS is measured on the collector lead at the soldering point to the pcb.
q
For low-noise, high-gain amplifiers up to 2 GHz.
q
Linear broadband applications at collector currents
up to 40 mA.
q
Hermetically sealed ceramic package.
q fT = 8 GHz
F = 1.1 dB at 800 MHz




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