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BFQ76 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BFQ76
Description  PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents up to 20 mA.)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFQ76 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

   
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Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC Characteristics
V
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CE0
15
µA
Emitter-base cutoff current
VEB = 2 V, IC = 0
IEB0
––10
DC current gain
IC = 14 mA, VCE = 10 V
hFE
20
50
nA
Collector-base cutoff current
VCB = 10 V, IE = 0
ICB0
––50
AC Characteristics
Power gain
IC = 14 mA, VCE = 10 V, f = 800 MHz,
ZS = ZSopt, ZL = ZLopt
Gpe
–17
GHz
Transition frequency
IC = 14 mA, VCE = 10 V, f = 500 MHz
fT
–5–
Output capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Cobs
0.9
dB
Noise figure
IC = 5 mA, VCE = 6 V, f = 10 MHz, ZS = 75
IC = 4 mA, VCE = 10 V, f = 800 MHz, ZS = ZSopt
F
1.8
2.5
pF
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
Ccb
0.55
Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Cibo
1.2
BFQ 76


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