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BFQ76 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BFQ76
Description  PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents up to 20 mA.)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFQ76 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

   
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PNP Silicon RF Transistor
BFQ 76
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type
Marking
Package1)
Pin Configuration
BFQ 76
Q62702-F804
76
Cerec-X
1
2
3
4
B
E
C
E
Ordering Code
(tape and reel)
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
15
V
Emitter-base voltage
VEB0
2
Collector current
IC
30
mA
Collector-base voltage
VCB0
20
Junction temperature
Tj
175
˚C
Ambient temperature range
TA
– 65 … + 175
Total power dissipation, TS
116 ˚C3)
Ptot
250
mW
Storage temperature range
Tstg
– 65 … + 175
Thermal Resistance
Junction - ambient2)
Rth JA
315
K/W
Junction - soldering point3)
Rth JS
235
1)
For detailed dimensions see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
× 16.7 mm × 0.7 mm.
3)
TS is measured on the collector lead at the soldering point to the pcb.
q
For broadband amplifiers up to 2 GHz
at collector currents up to 20 mA.
q
Complementary type: BFQ 71 (NPN).


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