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BFQ75 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BFQ75
Description  PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA.)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFQ75 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

   
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PNP Silicon RF Transistor
BFQ 75
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type
Marking
Package1)
Pin Configuration
BFQ 75
Q62702-F803
75
Cerec-X
1
2
3
4
B
E
C
E
Ordering Code
(tape and reel)
Thermal Resistance
Junction - ambient2)
Rth JA
260
K/W
Junction - soldering point3)
Rth JS
180
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
12
V
Emitter-base voltage
VEB0
2
Collector current
IC
50
mA
Collector-base voltage
VCB0
15
Junction temperature
Tj
175
˚C
Ambient temperature range
TA
– 65 … + 175
Total power dissipation, TS
112 ˚C3)
Ptot
350
mW
Storage temperature range
Tstg
– 65 … + 175
Collector-emitter voltage, VBE = 0
VCES
1
1)
For detailed dimensions see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
× 16.7 mm × 0.7 mm.
3)
TS is measured on the collector lead at the soldering point to the pcb.
q
For broadband amplifiers up to 2 GHz
at collector currents from 5 mA to 30 mA.
q
Complementary type: BFQ 72 (NPN).


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