BFQ74 datasheet(2/14 Pages) SIEMENS

Part #	BFQ74

Description	NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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BFQ 74

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC Characteristics

V

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CE0

16

–

µA

Emitter-base cutoff current

VEB = 2 V, IC = 0

IEB0

––10

–

DC current gain

IC = 5 mA, VCE = 10 V

IC = 15 mA, VCE = 10 V

hFE

50

110

120

250

–

nA

Collector-base cutoff current

VCB = 15 V, IE = 0

ICB0

––50

V

Collector-emitter saturation voltage

IC = 30 mA, IB = 3 mA

VCEsat

–

0.13

0.3

Base-emitter voltage

IC = 10 mA, VCE = 10 V

VBE

–

0.78

–

µA

Collector-emitter cutoff current

VCE = 25 V, VBE = 0

ICES

–

100

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BFQ74 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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