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BFQ72 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BFQ72
Description  NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFQ72 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

 
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Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
AC Characteristics
Unit
Values
Parameter
Symbol
min.
typ.
max.
Power gain
IC = 25 mA, VCE = 8 V, f = 800 MHz,
ZS = ZSopt, ZL = ZLopt
Gpe
–18
GHz
Transition frequency
IC = 25 mA, VCE = 5 V, f = 200 MHz
IC = 50 mA, VCE = 5 V, f = 200 MHz
fT
5.1
4.7
Collector-emitter capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Cce
0.4
Output capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Cobs
0.95
1.5
dB
Noise figure
IC = 10 mA, VCE = 8 V, f = 10 MHz, ZS = 75
IC = 10 mA, VCE = 8 V, f = 800 MHz, ZS = 50
F
1.7
2.5
pF
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
Ccb
0.55
0.7
Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Cibo
2.1
Transducer gain
IC = 25 mA, VCE = 8 V, f = 1 GHz, Z0 = 50
I S21e I 2
12.5
mV
Linear output voltage
two-tone intermodulation test
IC = 25 mA, VCE = 8 V, dIM = 60 dB
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50
Vo1 = Vo2
240
dBm
Third order intercept point
IC = 25 mA, VCE = 8 V, f = 800 MHz
IP3
30.5
BFQ 72


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