BFQ71 datasheet(3/18 Pages) SIEMENS | NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)

Part No.	BFQ71

Description	NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

AC Characteristics

Unit

Values

Parameter

Symbol

min.

typ.

max.

Power gain

IC = 2 mA, VCE = 6 V, f = 800 MHz,

ZS = ZSopt, ZL = ZLopt

Gpe

–15

–

GHz

Transition frequency

IC = 5 mA, VCE = 6 V, f = 200 MHz

IC = 20 mA, VCE = 6 V, f = 200 MHz

fT

–

4

4.2

5.2

–

Collector-emitter capacitance

VCE = 6 V, VBE = vbe = 0, f = 1 MHz

Cce

–

0.4

–

Output capacitance

VCE = 6 V, VBE = vbe = 0, f = 1 MHz

Cobs

–

0.86

1.2

dB

Noise figure

IC = 5 mA, VCE = 6 V, f = 10 MHz, ZS = 75

Ω

IC = 2 mA, VCE = 6 V, f = 800 MHz, ZS = ZSopt

IC = 3 mA, VCE = 10 V, f = 2 GHz, ZS = ZSopt

F

–

1.4

1.5

3.2

2.2

3

–

pF

Collector-base capacitance

VCB = 6 V, VBE = vbe = 0, f = 1 MHz

Ccb

–

0.46

0.6

Input capacitance

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

Cibo

–

1.2

–

Transducer gain

IC = 20 mA, VCE = 6 V, f = 1 GHz, Z0 = 50

Ω

I S21e I 2

–

13.4

–

mV

Linear output voltage

two-tone intermodulation test

IC = 15 mA, VCE = 10 V, dIM = 60 dB,

f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50

Ω

Vo1 = Vo2 –

110

–

dBm

Third order intercept point

IC = 15 mA, VCE = 10 V, f = 800 MHz

IP3

–

23.5

–

BFQ 71

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BFQ71 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

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