BFQ71 datasheet(1/18 Pages) SIEMENS | NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)

Part No.	BFQ71

Description	NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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NPN Silicon RF Transistor

BFQ 71

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Maximum Ratings

Type

Ordering Code

(tape and reel)

Marking

Package1)

Pin Configuration

BFQ 71

Q62702-F775

71

Cerec-X

1

2

3

B

E

C

4

E

Parameter

Symbol

Values

Unit

Collector-emitter voltage

VCE0

15

V

Emitter-base voltage

VEB0

2.5

Collector current

IC

30

mA

Collector-base voltage

VCB0

20

Base current

IB

4

Junction temperature

Tj

175

˚C

Ambient temperature range

TA

– 65 … + 175

Total power dissipation, TS

≤ 103 ˚C3)

Ptot

300

mW

Storage temperature range

Tstg

– 65 … + 175

Thermal Resistance

Junction - ambient2)

Rth JA

≤ 320

K/W

Junction - soldering point3)

Rth JS

≤ 240

Collector-emitter voltage, VBE = 0

VCES

20

1)

For detailed dimensions see chapter Package Outlines.

2)

Package mounted on alumina 15 mm

× 16.7 mm × 0.7 mm.

3)

TS is measured on the collector lead at the soldering point to the pcb.

q

For broadband amplifiers up to 2 GHz and fast

non-saturated switches at collector currents from

1 mA to 20 mA.

q

Hermetically sealed ceramic package.

q

HiRel/Mil screening available.

q

CECC-type available: CECC 50002/260.

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