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BFQ71 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BFQ71 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 18 page  NPN Silicon RF Transistor BFQ 71 ESD: Electrostatic discharge sensitive device, observe handling precautions! Maximum Ratings Type Ordering Code (tape and reel) Marking Package1) Pin Configuration BFQ 71 Q62702-F775 71 Cerec-X 1 2 3 B E C 4 E Parameter Symbol Values Unit Collector-emitter voltage VCE0 15 V Emitter-base voltage VEB0 2.5 Collector current IC 30 mA Collector-base voltage VCB0 20 Base current IB 4 Junction temperature Tj 175 ˚C Ambient temperature range TA – 65 … + 175 Total power dissipation, TS ≤ 103 ˚C3) Ptot 300 mW Storage temperature range Tstg – 65 … + 175 Thermal Resistance Junction - ambient2) Rth JA ≤ 320 K/W Junction - soldering point3) Rth JS ≤ 240 Collector-emitter voltage, VBE = 0 VCES 20 1) For detailed dimensions see chapter Package Outlines. 2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. q For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. q Hermetically sealed ceramic package. q HiRel/Mil screening available. q CECC-type available: CECC 50002/260. |
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