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BFQ70 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BFQ70
Description  NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BFQ70 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

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Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
AC Characteristics
Unit
Values
Parameter
Symbol
min.
typ.
max.
Power gain
IC = 20 mA, VCE = 6 V, f = 800 MHz,
ZS = ZSopt, ZL = ZLopt
Gpe
–18
GHz
Transition frequency
IC = 3 mA, VCE = 6 V, f = 200 MHz
IC = 20 mA, VCE = 6 V, f = 200 MHz
fT
3.6
2.7
5
Collector-emitter capacitance
VCE = 6 V, VBE = vbe = 0, f = 1 MHz
Cce
0.41
Output capacitance
VCE = 6 V, VBE = vbe = 0, f = 1 MHz
Cobs
0.87
1.3
dB
Noise figure
IC = 3 mA, VCE = 6 V, f = 10 MHz, ZS = 75
IC = 4 mA, VCE = 6 V, f = 800 MHz, ZS = 50
F
0.9
1.5
1.2
pF
Collector-base capacitance
VCB = 6 V, VBE = vbe = 0, f = 1 MHz
Ccb
0.46
0.6
Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Cibo
2.2
Transducer gain
IC = 10 mA, VCE = 6 V, f = 1 GHz, Z0 = 50
I S21e I 2
–13
mV
Linear output voltage
two-tone intermodulation test
IC = 20 mA, VCE = 6 V, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50
Vo1 = Vo2
170
dBm
Third order intercept point
IC = 20 mA, VCE = 6 V, f = 800 MHz
IP3
27.5
BFQ 70


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