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BFQ70 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BFQ70
Description  NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFQ70 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

 
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Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC Characteristics
V
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CE0
15
µA
Emitter-base cutoff current
VEB = 2 V, IC = 0
IEB0
––10
DC current gain
IC = 3 mA, VCE = 6 V
IC = 10 mA, VCE = 6 V
hFE
50
50
130
250
nA
Collector-base cutoff current
VCB = 10 V, IE = 0
ICB0
––50
V
Collector-emitter saturation voltage
IC = 20 mA, IB = 1 mA
VCEsat
0.1
0.4
Base-emitter voltage
IC = 10 mA, VCE = 6 V
VBE
0.78
BFQ 70


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