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BFQ70 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BFQ70
Description  NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFQ70 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

 
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NPN Silicon RF Transistor
BFQ 70
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package1)
Pin Configuration
BFQ 70
Q62702-F774
70
Cerex-X
1
2
3
B
E
C
4
E
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
15
V
Emitter-base voltage
VEB0
2.5
Collector current
IC
35
mA
Collector-emitter voltage, VBE = 0
VCES
20
Base current
IB
4
Junction temperature
Tj
175
˚C
Ambient temperature range
TA
– 65 … + 175
Total power dissipation, TS
121 ˚C3)
Ptot
300
mW
Storage temperature range
Tstg
– 65 … + 175
Thermal Resistance
Junction - ambient2)
Rth JA
260
K/W
Junction - soldering point3)
Rth JS
180
Collector-base voltage
VCB0
20
1)
For detailed dimensions see chapter Package Outlines.
2)
Package mounted on alumina 16 mm
× 25 mm × 0.7 mm.
3)
TS is measured on the collector lead at the soldering point to the pcb.
q
For low-noise IF and broadband amplifiers in
antenna and telecommunications systems at
collector currents from 2 mA to 20 mA.
q
Hermetically sealed ceramic package
q
HiRel/Mil screening available.


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