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BFQ29P Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BFQ29P
Description  NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFQ29P Datasheet(HTML) 3 Page - Siemens Semiconductor Group

 
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BFQ 29P
BFQ 29P
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
AC Characteristics
Unit
Values
Parameter
Symbol
min.
typ.
max.
Power gain
IC = 20 mA, VCE = 6 V, f = 800 MHz,
Z0 = 50
Ω, ZL = ZLopt
Gpe
–14
GHz
Transition frequency
IC = 3 mA, VCE = 6 V, f = 200 MHz
IC = 20 mA, VCE = 6 V, f = 200 MHz
fT
3.6
2.7
5
Collector-emitter capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Cce
0.28
Output capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Cobs
0.8
dB
Noise figure
IC = 3 mA, VCE = 6 V, f = 10 MHz, ZS = 75
IC = 4 mA, VCE = 6 V, f = 800 MHz, ZS = 50
F
0.9
1.5
1.2
pF
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
Ccb
0.5
0.65
Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Cibo
1.35
Transducer gain
IC = 20 mA, VCE = 6 V, f = 1 GHz, Z0 = 50
I S21e I 2
–11
mV
Linear output voltage
two-tone intermodulation test
IC = 20 mA, VCE = 6 V, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50
Vo1 = Vo2
180
dBm
Third order intercept point
IC = 20 mA, VCE = 6 V, f = 800 MHz
IP3
–28


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