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BFQ29P Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BFQ29P
Description  NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFQ29P Datasheet(HTML) 2 Page - Siemens Semiconductor Group

 
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BFQ 29P
BFQ 29P
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC Characteristics
V
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CE0
15
–
–
µA
Emitter-base cutoff current
VEB = 3 V, IC = 0
IEB0
–
–
100
–
DC current gain
IC = 3 mA, VCE = 6 V
IC = 10 mA, VCE = 6 V
hFE
50
50
–
140
250
–
µA
Collector-base cutoff current
VCB = 10 V, IE = 0
VCB = 20 V, IE = 0
ICB0
–
–
–
–
0.05
10
V
Collector-emitter saturation voltage
IC = 20 mA, IB = 1 mA
VCEsat
–
0.1
0.4


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