BFQ29P datasheet(2/10 Pages) SIEMENS | NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)

Part No.	BFQ29P

Description	NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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BFQ 29P

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC Characteristics

V

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CE0

15

–

µA

Emitter-base cutoff current

VEB = 3 V, IC = 0

IEB0

–

100

–

DC current gain

IC = 3 mA, VCE = 6 V

IC = 10 mA, VCE = 6 V

hFE

50

–

140

250

–

µA

Collector-base cutoff current

VCB = 10 V, IE = 0

VCB = 20 V, IE = 0

ICB0

–

0.05

10

V

Collector-emitter saturation voltage

IC = 20 mA, IB = 1 mA

VCEsat

–

0.1

0.4

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BFQ29P Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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