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BFP420 Datasheet(PDF) 4 Page - Siemens Semiconductor Group

Part No. BFP420
Description  NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFP420 Datasheet(HTML) 4 Page - Siemens Semiconductor Group

   
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BFP 420
Semiconductor Group
Jul-14-1998
4
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
0.20045
aA
VAF =
28.383
V
NE =
2.0518
-
VAR =
19.705
V
NC =
1.1724
-
RBM =
8.5757
CJE =
1.8063
fF
TF =
6.7661
ps
ITF =
1mA
VJC =
0.81969
V
TR =
2.3249
ns
MJS =
0-
XTI =
3
-
NF =
1.2432
-
ISE =
19.049
pA
NR =
1.3325
-
ISC =
0.019237
A
IRB =
0.72983
mA
RC =
0.10105
MJE =
0.46576
-
VTF =
0.23794
V
CJC =
234.53
fF
XCJC =
0.3
-
VJS =
0.75
V
EG =
1.11
eV
TNOM
300
K
BF =
72.534
-
IKF =
0.48731
A
BR =
7.8287
-
IKR =
0.69141
A
RB =
3.4849
RE =
0.31111
VJE =
0.8051
V
XTF =
0.42199
-
PTF =
0
deg
MJC =
0.30232
-
CJS =
0F
XTB =
0-
FC =
0.73234
-
C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS =
3.5
fA
N =
1.02
-
RS =
10
All parameters are ready to use, no scalling is necessary
Package Equivalent Circuit:
LBI =
0.47
nH
LBO =
0.53
nH
LEI =
0.23
nH
LEO =
0.05
nH
LCI =
0.56
nH
LCO =
0.58
nH
CBE =
136
fF
CCB =
6.9
fF
CCE =
134
fF
EHA07389
L
BI
BE
C
BO
L
C
EI
L
L
EO
CB
C
CI
L
CO
L
CE
C
Transistor
C’-E’-
B
Diode
E
E’
C’
B’
Chip
Valid up to 6GHz
The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit,
both leads are combined in one electrical connection.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitentechnik (IMST)
© 1996 SIEMENS AG
For examples and ready to use parameters please contact your local Siemens distributor or salesoffice to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
1998-11-01


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