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BFP420 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BFP420
Description  NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFP420 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

   
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BFP 420
Semiconductor Group
Jul-14-1998
2
Electrical Characteristics at
TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
5
6.5
4.5
V(BR)CEO
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V
-
200
-
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO
nA
-
35
µA
-
Emitter-base cutoff current
VEB = 1.5 V, IC = 0
IEBO
80
DC current gain
IC = 20 mA, VCE = 4 V
hFE
150
-
50
AC characteristics
Transition frequency
IC = 30 mA, VCE = 3 V, f = 2 GHz
fT
20
25
-
GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz
Ccb
-
0.15
0.24
pF
Collector-emitter capacitance
VCE = 2 V, f = 1 MHz
Cce
-
0.41
-
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
-
0.55
-
Noise figure
IC = 5 mA, VCE = 2 V, ZS = ZSopt ,
f = 1.8 GHz
F
-
1.05
1.4
dB
Power gain 1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt , ZL = ZLopt ,
f = 1.8 GHz
Gms
-
20
-
Insertion power gain
IC = 20 mA, VCE = 2 V, f = 1.8 GHz,
ZS = ZL = 50Ω
|
S21|2
14
17
-
dB
Third order intersept point
IC = 20 mA, VCE = 2 V, ZS=ZSopt , ZL=ZLopt ,
f = 1.8 GHz
IP3
-
22
-
dBm
1dB Compression point
IC = 20 mA, VCE = 2 V, f = 1.8 GHz,
ZS=ZSopt , ZL=ZLopt
P-1dB
-
12
-
1)
Gms = |S21 / S12|
Semiconductor Group
2
1998-11-01


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