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BFP420 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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BFP420 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
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BFP 420 Semiconductor Group Jul-14-1998 2 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics 5 6.5 4.5 V(BR)CEO Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V - 200 - Collector-base cutoff current VCB = 5 V, IE = 0 ICBO nA - 35 µA - Emitter-base cutoff current VEB = 1.5 V, IC = 0 IEBO 80 DC current gain IC = 20 mA, VCE = 4 V hFE 150 - 50 AC characteristics Transition frequency IC = 30 mA, VCE = 3 V, f = 2 GHz fT 20 25 - GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Ccb - 0.15 0.24 pF Collector-emitter capacitance VCE = 2 V, f = 1 MHz Cce - 0.41 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 0.55 - Noise figure IC = 5 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz F - 1.05 1.4 dB Power gain 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Gms - 20 - Insertion power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50Ω | S21|2 14 17 - dB Third order intersept point IC = 20 mA, VCE = 2 V, ZS=ZSopt , ZL=ZLopt , f = 1.8 GHz IP3 - 22 - dBm 1dB Compression point IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS=ZSopt , ZL=ZLopt P-1dB - 12 - 1) Gms = |S21 / S12| Semiconductor Group 2 1998-11-01 |
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