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BFP420 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BFP420
Description  NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFP420 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

   
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BFP 420
Semiconductor Group
Jul-14-1998
1
SIEGET®25
NPN Silicon RF Transistor
• For high gain low noise amplifiers
• For oscillators up to 10 GHz
• Noise figure F = 1.05 dB at 1.8 GHz
outstanding
Gms = 20 dB at 1.8 GHz
• Transition frequency f
T = 25 GHz
• Gold metalization for high reliability
• SIEGET ® 25 - Line
Siemens Grounded Emitter Transistor
25 GHz
fT - Line
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFP 420
AMs
Q62702-F1591
1 = B
2 = E
3 = C
4 = E
SOT-343
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
V
4.5
VCBO
15
Collector-base voltage
VEBO
Emitter-base voltage
1.5
Collector current
35
mA
IC
IB
3
Base current
mW
160
Total power dissipation,
TS ≤ 107 °C
Ptot
Junction temperature
Tj
150
°C
TA
-65 ...+150
Ambient temperature
Storage temperature
Tstg
-65 ...+150
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 270
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
Semiconductor Group
1
1998-11-01


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