DB3/DB4

SILICON BIDIRECTIONAL DIAC

特征 Features

·反向漏电流低

Low reverse leakage

·正向浪涌承受能力较强

High forward surge capability

·高温焊接保证 High temperature soldering guaranteed:

260℃/10 秒, 0.375" (9.5mm)引线长度。

260℃/10 seconds, 0.375" (9.5mm) lead length,

·引线可承受5 磅 (2.3kg) 拉力。 5 lbs. (2.3kg) tension

机械数据 Mechanical Data

·端子: 镀锡轴向引线 Terminals: Plated axial leads

·安装位置: 任意 Mounting Position: Any

·引线和管体皆符合RoHS标准 。

Lead and body according with RoHS standard

双向触发二极管

大昌电子 DACHANG ELECTRONICS

极限参数( LIMITING VALUES )

符号

Symbols

Parameters

Power Dissipation

Repetitive Peak on-state Current

Storage Temperature

tp=10uS

F=100Hz

Value

DB3/DB4

mW

A

℃

150

2.0

-40 to +125

电特性(ELECTRICAL CHARACTERISTICS)

Breakover Voltage [Note 2 ]

Value

DB3

Test Conditions

击穿电压对称性

Dynamic Breakover Voltage [Note 1 ]

Output Voltage [Note 1 ]

Breakover Current [Note 1 ]

Rise Time [Note 1 ]

Leakage Current [Note 1 ]

I ± △VI

tr

C=22nF [Note 2 ]

See Diagram 1

C=22nF [Note 2 ]

See Diagram 1

See Diagram 1

See Diagram 2

C=22nF [Note 2 ]

See Diagram 3

See Diagram 1

Min

Typ

Max

Max

Min

Min

Max

Typ

Max

V

uA

uS

uA

V

V

V

± 3

5

5

100

1.5

10

28

36

32

单位

Unit

参数

峰值脉冲电压

功耗

贮存 温度范围

单位

Unit

符号

Symbols

Parameters

参数

测试条件

击穿电压

Breakover Voltage Symmetry

动态回弹电压

输出电压

击穿电流

上升时间

漏电电流

0 perating Junction Temperature

℃

-40 to +100

工作结温范围

Notes:1.Electrical characteristics applicable in both forward and reverse directions.

2.Connected in parallel with the devices.

Peak Current [Note 1 ]

See Diagram 2 (Gate)

Min

A

0.3

峰值电流

DO-35 Glass

Unit：mm

DB4

35

45

40