BFP193W datasheet(3/7 Pages) SIEMENS

Part #	BFP193W

Description	NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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3 / 7 page

Semiconductor Group

3

Dec-12-1996

BFP 193W

Electrical Characteristics at

TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 8 V, f = 500 MHz

fT

6

8

-

GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

-

0.63

0.9

pF

Collector-emitter capacitance

VCE = 10 V, f = 1 MHz

Cce

-

0.33

-

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

-

1.8

-

Noise figure

IC = 10 mA, VCE = 8 V, ZS = ZSopt

f = 900 MHz

f = 1.8 GHz

F

-

2.1

1.3

-

dB

Power gain

2)

IC = 30 mA, VCE = 8 V, ZS = ZSopt

ZL = ZLopt

f = 900 MHz

f = 1.8 GHz

Gma

-

13

19.5

-

Transducer gain

IC = 30 mA, VCE = 8 V, ZS =ZL= 50 Ω

f = 900 MHz

f = 1.8 GHz

|

S21e|2

-

9

15

-

2)

Gma = |S21/S12| (k-(k2-1)1/2)

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BFP193W Datasheet(PDF) 3 Page - Siemens Semiconductor Group

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