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BFP182W Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BFP182W
Description  NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFP182W Datasheet(HTML) 3 Page - Siemens Semiconductor Group

   
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Semiconductor Group
3
Dec-12-1996
BFP 182W
Electrical Characteristics at
TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
IC = 15 mA, VCE = 8 V, f = 500 MHz
fT
6
8
-
GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
-
0.3
0.45
pF
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Cce
-
0.27
-
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
-
0.6
-
Noise figure
IC = 3 mA, VCE = 8 V, ZS = ZSopt
f = 900 MHz
f = 1.8 GHz
F
-
-
1.9
1.2
-
-
dB
Power gain
1)
IC = 10 mA, VCE = 8 V, f = 900 MHz
ZS = ZSopt, ZL = ZLopt
Gms
-
21.5
-
Power gain
2)
IC = 10 mA, VCE = 8 V, f = 1.8 GHz
ZS = ZSopt, ZL = ZLopt
Gma
-
15.5
-
Transducer gain
IC = 10 mA, VCE = 8 V, ZS =ZL= 50 Ω
f = 900 MHz
f = 1.8 GHz
|
S21e|2
-
-
12
17.5
-
-
1)
Gms = |S21/S12|
2)
Gma = |S21/S12| (k-(k2-1)1/2)


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