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2SK3018 Datasheet(PDF) 2 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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2SK3018 Datasheet(HTML) 2 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
2 / 4 page • Electrical characteristics (Ta = 25°C) Parameter Symbo Min. Typ. Max. Unit Test Conditions Gate-source leakage IGSS ---- ---- ±1 µA VGS=±20V,VDS=0V Drain-source breakdown voltage V(BR)DS 30 ---- ---- V ID=10µA ,VGS=0V Zero gate voltage drain current IDSS ---- ---- 1 µA VDS=30V ,VGS=0V Gate treshold Voltage VGS(th) 0.8 ---- 1.5 V VDS=3V ,ID=100µA RDS(ON) ---- 5 8 Ω ID=10mA , VGS= 4V Static drain-source on-state resistance R DS(ON) ---- 7 13 Ω ID=1mA , VGS=2.5V Forward transfer admittance Yfs 20 ---- ---- mS VDS=3V, ID=10mA Input capacitance Ciss ---- 13 ---- pF Output capacitance Coss ---- 9 ---- pF Reverse transfer capacitance Crss ---- 4 pF VDS=5V VGS=0V F=1 MHz Turn-on delay time td(on) ---- 15 ns Rise time tr ---- 35 ns Turn-off delay time td(off) ---- 80 ns Fall time tr ---- 80 ns ID=10 mA ,VDO=5V VGS= 5V RL=500Ω RGS=10Ω • Packaging specifications Package Taping Code T106 Type Basic ordering unit ( pieces ) 3000 2SK3018 ● • Electrical characteristic curves 2SK3018 N-Channel Enhancement Mode MOSFET 2 Date:2011/05 www.htsemi.com semiconductor JinYu |
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