 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BFP182 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
|
||||||||||||||||||||||||||||||
BFP182 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
|
|
1 / 7 page 
Semiconductor Group 1 Dec-12-1996 BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 182 RGs Q62702-F1396 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 mA Base current IB 4 Total power dissipation TS ≤ 69 °C Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) RthJS ≤ 325 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
