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BFP182 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BFP182 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 7 page  Semiconductor Group 1 Dec-12-1996 BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 182 RGs Q62702-F1396 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 mA Base current IB 4 Total power dissipation TS ≤ 69 °C Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) RthJS ≤ 325 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. |
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