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BFP181R Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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BFP181R Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 7 page Semiconductor Group 2 Jan-21-1997 BFP 181R Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200 - |
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