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BFP181 Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
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BFP181 Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
6 / 7 page Semiconductor Group 6 Dec-11-1996 BFP 181 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz 0 4 8 12 16 V 22 V R 0.00 0.04 0.08 0.12 0.16 0.20 0.24 pF 0.32 C cb Transition frequency fT = f (IC) VCE = Parameter 0 2 4 6 8 10 12 14 mA 17 I C 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 GHz 10.0 f T 10V 8V 5V 3V 2V 1V 0.7V Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 0 2 4 6 8 10 12 14 mA 18 I C 8 10 12 14 16 18 20 dB 24 G 10V 5V 3V 2V 1V 0.7V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 0 2 4 6 8 10 12 14 mA 18 I C 0 2 4 6 8 10 12 14 dB 18 G 10V 5V 3V 2V 1V 0.7V |
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Similar Description - BFP181 |
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