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TSM3424CX6RFG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Part # TSM3424CX6RFG
Description  30V N-Channel MOSFET
Download  6 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM3424CX6RFG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM3424
30V N-Channel MOSFET
2/6
Version: C11
Electrical Specifications (Ta = 25
oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
a
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
30
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1
1.4
3
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
µA
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
IDSS
--
--
1.0
µA
On-State Drain Current
VDS ≥ 5V, VGS = 10V
ID(ON)
30
--
--
A
Drain-Source On-State Resistance
VGS = 10V, ID = 6.7A
RDS(ON)
--
23
30
m
VGS = 4.5V, ID = 5.7A
--
32
42
Forward Transconductance
VDS = 5V, ID = 5.0A
gfs
--
14
--
S
Diode Forward Voltage
IS = 1.7A, VGS = 0V
VSD
--
0.76
1
V
Dynamic
b
Total Gate Charge
VDS = 15V, ID = 6.7A,
VGS = 10V
Qg
--
4.52
--
nC
Gate-Source Charge
Qgs
--
1.24
--
Gate-Drain Charge
Qgd
--
1.68
--
Input Capacitance
VDS = 15V, VGS = 0V,
f = 1.0MHz
Ciss
--
400.96
--
pF
Output Capacitance
Coss
--
100.47
--
Reverse Transfer Capacitance
Crss
--
71.82
--
Switching
c
Turn-On Delay Time
VDD = 15V, RL = 2.2 ,
ID = 1A, VGEN = 10V,
RG = 6
td(on)
--
7.42
--
nS
Turn-On Rise Time
tr
--
3.41
--
Turn-Off Delay Time
td(off)
--
20.4
--
Turn-Off Fall Time
tf
--
3.01
--
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.


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