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TSM3424CX6RF Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # TSM3424CX6RF
Description  30V N-Channel MOSFET
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM3424CX6RF Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSM3424
30V N-Channel MOSFET
1/6
Version: C11
SOT-26
Features
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Load Switch
●
PA Switch
Ordering Information
Part No.
Package
Packing
TSM3424CX6 RF
SOT-26
3Kpcs / 7” Reel
TSM3424CX6 RFG
SOT-26
3Kpcs / 7” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25
oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
6.7
A
Pulsed Drain Current
IDM
30
A
Continuous Source Current (Diode Conduction)
a,b
IS
1.7
A
Maximum Power Dissipation
Ta = 25
oC
PD
2.0
W
Ta = 75
oC
1.3
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
oC
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Case Thermal Resistance
RӨJC
30
oC/W
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
80
oC/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
PRODUCT SUMMARY
VDS (V)
RDS(on)(m )
ID (A)
30
30 @ VGS = 10V
6.7
42 @ VGS = 4.5V
5.7
Block Diagram
N-Channel MOSFET
Pin Definition:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate
4. Source


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