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TS3A26746E_1111 Datasheet(PDF) 2 Page - Texas Instruments |
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TS3A26746E_1111 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 8 page LEFT RIGHT MIC SLEEVE TIP RING1 RING2 V + SEL = H 100 kW MIC BIAS ACCESSORY DATA LEFT RIGHT MIC SLEEVE TIP RING1 RING2 V + SEL =L 100 kW MIC BIAS ACCESSORY DATA TS3A26746E SCDS313B – FEBRUARY 2011 – REVISED NOVEMBER 2011 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. TYPICAL APPLICATION BLOCK DIAGRAM Figure 1. Standard Headphone Configuration (SEL=H) Figure 2. Alternate Headphone Configuration (SEL=L) 2 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TS3A26746E |
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