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BF550 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part # BF550
Description  PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BF550 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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BF 550
Semiconductor Group
2
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC Characteristics
AC Characteristics
V
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR) CE0
40
Collector-base breakdown voltage
IC = 10
µA, IE = 0
V(BR) CB0
40
Emitter-base breakdown voltage
IE = 10
µA, IC = 0
V(BR) EB0
4––
nA
Collector cutoff current
VCB = 30 V, IE = 0
ICB0
100
DC current gain
IC = 1 mA, VCE = 10 V
hFE
50
250
V
Base-emitter voltage
IC = 1 mA, VCE = 10 V
VBE
0.72
MHz
Transition frequency
IC = 1 mA, VCE = 10 V, f = 100 MHz
fT
350
pF
Collector-base capacitance
VCB = 10 V, VBE = 0 V, f = 1 MHz
Ccb
0.33
Collector-emitter capacitance
VCE = 10 V, VBE = 0 V, f = 1 MHz
Cce
0.67
dB
Noise figure
VCE = 10 V
IC = 1 mA, f = 100 kHz, RS = 300
IC = 2 mA, f = 100 MHz, RS = 60
F
2
3.4
µS
pF
mS
pF
µS
µS
f = 0.45 … 10 MHz
f = 500 kHz
f = 10 MHz
g11e
C11e
I y21e I
C22e
g22e
g22e
550
17
35
1.3
5
5
8
10
Y parameters, common emitter
IC = 1 mA, VCE = 10 V


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