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BF543 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part # BF543
Description  Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BF543 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Unit
Values
V
nA
Parameter
Drain-source breakdown voltage
ID = 10
µA, – VGS = 4 V
Gate-source breakdown voltage
± IGS = 10 mA, VDS = 0
Gate cutoff current
± VGS = 6 V, VDS = 0
Symbol
V(BR)DS
±V(BR)GSS
± IGSS
min.
20
7
typ.
max.
12
50
mA
Drain current
VDS = 10 V, VGS = 0
IDSS
2.0
4
6.0
V
Gate-source pinch-off voltage
VDS = 10 V, ID = 20
µA
– VGS(p)
0.7
1.5
DC Characteristics
mS
Forward transconductance
VDS = 10 V, ID = 4 mA, f = 1 kHz
gfs
9.5
12
pF
Gate-1 input capacitance
VDS = 10 V, ID = 4 mA, f = 1 MHz
Cgss
2.7
fF
Reverse transfer capacitance
VDS = 10 V, ID = 4 mA, f = 1 MHz
Cdg
–18
dB
Power gain (test circuit)
VDS = 10 V, ID = 4 mA, f = 200 MHz
GG = 2 mS, GL = 0.5 mS
Gp
–22
pF
Output capacitance
VDS = 10 V, ID = 4 mA, f = 1 MHz
Cdss
0.9
Noise figure (test circuit)
VDS = 10 V, ID = 4 mA, f = 200 MHz
GG = 2 mS, GL = 0.5 mS
F
–1–
AC Characteristics
BF 543


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