SWF3N80A datasheet(3/7 Pages) SEMIPOWER

Part #	SWF3N80A

Description	N-channel MOSFET

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Manufacturer	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Direct Link	http://www.samwinsemi.com

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3 / 7 page

Fig. 1. On-state characteristics

Fig. 2. Transfer characteristics

Fig. 3. On-resistance variation vs.

drain current and gate voltage

Fig. 5. Capacitance characteristics

(Non-Repetitive)

Fig. 6. Gate charge characteristics

Fig. 4. On state current vs.

diode forward voltage

10

-1

10

0

10

1

10

-2

10

-1

10

0

10

1

،ط Notes :

1. 250¥ىs Pulse Test

2. T

C = 25،ة

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom :

5.5 V

V

DS, Drain-Source Voltage [V]

2

3

4

5

6

7

8

9

10

-1

10

0

10

1

150

oC

25

oC

-55

oC

،ط Notes :

1. V

DS = 50V

2. 250¥ىs Pulse Test

V

GS, Gate-Source Voltage [V]

0

1

2

3

4

5

6

0

2

4

6

8

10

12

V

GS = 20V

V

GS = 10V

،ط Note : T

J = 25،ة

I

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

10

-1

10

0

10

1

150،ة

،ط Notes :

1. V

GS = 0V

2. 250¥ىs Pulse Test

25،ة

V

SD, Source-Drain voltage [V]

0

4

8

12

16

20

24

28

0

2

4

6

8

10

12

V

DS = 240V

V

DS = 400V

V

DS = 640V

،ط Note : I

D = 3.0 A

Q

G, Total Gate Charge [nC]

0

5

10

15

20

25

30

35

0

250

500

750

C

iss=Cgs+Cgd(Cds=shorted)

C

oss=Cds+Cgd

C

rss=Cgd

،ط Notes :

1. V

GS = 0V

2. f=1MHz

C

iss

C

oss

C

rss

V

DS, Drain-Source Voltage [V]

SW3N80A

SAMWIN

3/7

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