CGH55030F2 datasheet(1/10 Pages) CREE

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Subject to change without notice.

www.cree.com/wireless

CGH55030F2 / CGH55030P2

25 W, C-band, Unmatched, GaN HEMT

Cree’s CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron

mobility transistor (HEMT) designed specifically for high efficiency, high

gain and wide bandwidth capabilities, which makes the CGH55030F2/

CGH55030P2 ideal for C-band pulsed or CW saturated amplifiers. The

transistor is available in both screw-down, flange and solder-down,

pill packages. Based on appropriate external match adjustment, the

CGH55030F2/CGH55030P2 is suitable for applications up to 6 GHz.

Package Type: 440196

& 440166

PN: CGH55030P2

& CGH55030F2

FEATURES

• 4.5 to 6.0 GHz Operation

• 12 dB Small Signal Gain at 5.65 GHz

• 30 W typical P

SAT

• 60 % Efficiency at P

SAT

• 28 V Operation

APPLICATIONS

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB Amplifiers for Drivers and

Gain Blocks

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