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BCX54BCX56 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BCX54BCX56
Description  NPN Silicon AF Transistors (For AF driver and output stages High collector current)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BCX54BCX56 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

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BCX 54 … BCX 56
Semiconductor Group
3
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC current gain1)
IC = 5 mA, VCE = 2 V
IC = 150 mA, VCE = 2 V
BCX 54, BCX 55, BCX 56
BCX 54-10, BCX 55-10, BCX 56-10
BCX 54-16, BCX 55-16, BCX 56-16
IC = 500 mA, VCE = 2 V
hFE
25
40
63
100
25
100
160
250
160
250
V
Collector-emitter breakdown voltage
IC = 10 mA
BCX 54
BCX 55
BCX 56
V(BR)CE0
45
60
80
nA
µA
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0
100
20
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
IC = 100
µA
BCX 54
BCX 55
BCX 56
V(BR)CB0
45
60
100
Emitter-base breakdown voltage
IE = 10
µA
V(BR)EB0
5––
V
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat
0.5
Base-emitter voltage1)
IC = 500 mA, VCE = 2 V
VBE
––1
nA
Emitter cutoff current
VEB = 4 V
IEB0
––20
MHz
Transition frequency
IC = 50 mA, VCE = 10 V, f = 20 MHz
fT
100
AC characteristics
1)
Pulse test: t
300 µs, D = 2 %.


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