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PSMN8R0-30YL Datasheet(PDF) 6 Page - NXP Semiconductors

Part # PSMN8R0-30YL
Description  N-channel 8.3 m廓 30 V TrenchMOS logic level FET in LFPAK
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN8R0-30YL Datasheet(HTML) 6 Page - NXP Semiconductors

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PSMN8R0-30YL
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 16 May 2011
6 of 14
NXP Semiconductors
PSMN8R0-30YL
N-channel 8.3 m
Ω 30 V TrenchMOS logic level FET in LFPAK
Source-drain diode
VSD
source-drain voltage
IS =25A; VGS =0V; Tj =25°C;
see Figure 16
-0.9
1.2
V
trr
reverse recovery time
IS =15A; dIS/dt = -100 A/µs;
VGS =0V; VDS =15V
-34
-
ns
Qr
recovered charge
-
30
-
nC
Table 6.
Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 7.
Forward transconductance as a function of
drain current; typical values
Fig 8.
Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
003aaf421
0
20
40
60
80
0
0.5
1
1.5
2
VDS(V)
ID
(A)
2.4
VGS(V) = 10
2.6
2.8
3.0
3.5
4.5
003aaf422
0
15
30
45
60
01
23
45
VGS(V)
ID
(A)
Tj = 25 °C
Tj = 150 °C
003aaf423
0
15
30
45
60
015
30
45
60
ID (A)
gfs
(S)
003aaf424
0
500
1000
1500
2000
0369
12
VGS(V)
C
(pF)
Ciss
Crss


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