PSMN5R0-100ES

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Product data sheet

Rev. 3 — 26 September 2011

7 of 15

NXP Semiconductors

PSMN5R0-100ES

N-channel 100 V 5 m

Ω standard level MOSFET in I2PAK

[1]

Measured 3 mm from package.

Source-drain diode

source-drain voltage

see Figure 17

-0.8

1.2

V

reverse recovery time

-75

-ns

recovered charge

-

235

-

nC

Table 6.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 5.

Forward transconductance as a function of

drain current; typical values

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 7.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 8.

Output characteristics: drain current as a

function of drain-source voltage; typical values

003aaf723

0

50

100

150

200

250

0

30

60

90

120

I

g

fs

(S)

003aaf724

0

20

40

60

80

100

02

46

V

I

D

(A)

T

T

003aaf725

0

5

10

15

20

0

5

10

15

20

V

R

DSon

(m

Ω)

003aaf726

0

40

80

120

160

200

240

0

0.5

1

1.5

2

V

I

D

(A)

5.5

6.0

8.0

10.0

20.0

V

4.5