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BCX41 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BCX41
Description  NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BCX41 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

   
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Semiconductor Group
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BCX 41
BSS 64
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
V
Collector-emitter breakdown voltage
IC = 10 mA
BSS 64
BCX 41
V(BR)CE0
80
125
MHz
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
fT
100
pF
Output capacitance
VCB = 10 V, f = 1 MHz
Cobo
–12
AC characteristics
Collector-base breakdown voltage1)
IC = 100
µA
BSS 64
BCX 41
V(BR)CB0
120
125
µA
Collector cutoff current
VCE = 100 V
TA = 85 ˚C
BCX 41
TA = 125 ˚C
BCX 41
ICE0
10
75
Emitter-base breakdown voltage
IE = 10
µA
V(BR)EB0
5––
nA
nA
µA
µA
Collector cutoff current
VCB = 80 V
BSS 64
VCB = 100 V
BCX 41
VCB = 80 V, TA = 150 ˚C
BSS 64
VCB = 100 V, TA = 150 ˚C
BCX 41
ICB0
100
100
20
20
DC current gain1)
IC = 100
µA, VCE = 1 V
BCX 41
IC = 1 mA,
VCE = 1 V
BSS 64
IC = 4 mA,
VCE = 1 V
BSS 64
IC = 10 mA, VCE = 1 V
BSS 64
IC = 20 mA, VCE = 1 V
BSS 64
IC = 100 mA, VCE = 1 V
BCX 41
IC = 200 mA, VCE = 1 V
BCX 41
hFE
25
20
63
40
60
80
80
55
V
Collector-emitter saturation voltage1)
IC = 300 mA, IB = 30 mA
BCX 41
IC = 4 mA, IB = 0.4 mA
BSS 64
IC = 50 mA, IB = 15 mA
BSS 64
VCEsat
0.9
0.7
3.0
Base-emitter saturation voltage1)
IC = 300 mA, IB = 30 mA
BCX 41
VBEsat
1.4
nA
Emitter cutoff current
VEB = 4 V
IEB0
100
1)
Pulse test:
t
≤ 300 µs, D = 2 %


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