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BCW61 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BCW61
Description  PNP Silicon AF Transistors (For AF input stages and driver applications High current gain)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BCW61 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

   
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BCW 61
BCX 71
Semiconductor Group
3
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
V
Collector-emitter breakdown voltage
IC = 10 mA
BCW 61, BCW 61 FF
BCX 71
V(BR)CE0
32
45
nA
nA
µA
µA
Collector cutoff current
VCB = 32 V
BCW 61, BCW 61 FF
VCB = 45 V
BCX 71
VCB = 32 V, TA = 150 ˚C BCW 61, BCW 61 FF
VCB = 45 V, TA = 150 ˚C BCX 71
ICB0
20
20
20
20
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
IC = 10
µA
BCW 61, BCW 61 FF
BCX 71
V(BR)CB0
32
45
Emitter-base breakdown voltage
IE = 1
µA
V(BR)EB0
5––
DC current gain 1)
IC = 10
µA, VCE = 5 V
BCW 61 A, BCX 71 G
BCW 61 B, BCX 71 H
BCW 61 FF, BCW 61 C, BCX 71 J
BCW 61 FN, BCW 61 D, BCX 71 K
IC = 2 mA, VCE = 5 V
BCW 61 A, BCX 71 G
BCW 61 B, BCX 71 H
BCW 61 FF, BCW 61 C, BCX 71 J
BCW 61 FN, BCW 61 D, BCX 71 K
IC = 50 mA, VCE = 1 V
BCW 61 A, BCX 71 G
BCW 61 B, BCX 71 H
BCW 61 FF, BCW 61 C, BCX 71 J
BCW 61 FN, BCW 61 D, BCX 71 K
hFE
20
30
40
100
120
180
250
380
60
80
100
110
140
200
300
460
170
250
350
500
220
310
460
630
nA
Emitter cutoff current
VEB = 4 V
IEB0
––20
1)
Pulse test: t
300 µs, D 2%.


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