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BCW60 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BCW60
Description  NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BCW60 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

   
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Semiconductor Group
3
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
V
Collector-emitter breakdown voltage
IC = 10 mA
BCW 60, BCW 60 FF
BCX 70
V(BR)CE0
32
45
nA
nA
µA
µA
Collector cutoff current
VCB = 32 V
BCW 60, BCW 60 FF
VCB = 45 V
BCX 70
VCB = 32 V, TA = 150 ˚C BCW 60, BCW 60 FF
VCB = 45 V, TA = 150 ˚C BCX 70
ICB0
20
20
20
20
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
IC = 10
µA
BCW 60, BCW 60 FF
BCX 70
V(BR)CB0
32
45
Emitter-base breakdown voltage
IE = 1
µA
V(BR)EB0
5––
DC current gain 1)
IC = 10
µA, VCE = 5 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
IC = 2 mA, VCE = 5 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
IC = 50 mA, VCE = 1 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
hFE
20
20
40
100
120
180
250
380
50
70
90
100
140
200
300
460
170
250
350
500
220
310
460
630
nA
Emitter cutoff current
VEB = 4 V
IEB0
––20
1)
Pulse test: t
300 µs, D 2%.
BCW 60
BCX 70


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