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BCV26 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BCV26 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page Semiconductor Group 1 PNP Silicon Darlington Transistors BCV 26 BCV 46 Maximum Ratings Type Ordering Code (tape and reel) Marking Package1) Pin Configuration BCV 26 BCV 46 Q62702-C1493 Q62702-C1475 FDs FEs SOT-23 1 2 3 B E C 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Parameter Symbol Values Unit Collector-emitter voltage VCE0 V Peak collector current ICM Collector current IC mA Junction temperature Tj ˚C Total power dissipation, TS = 74 ˚C Ptot mW Storage temperature range Tstg Collector-base voltage VCB0 Thermal Resistance Junction - ambient2) Rth JA ≤ 280 K/W 500 800 360 150 – 65 … + 150 Emitter-base voltage VEB0 Base current IB 100 30 60 40 80 BCV 26 BCV 46 Peak base current IBM 200 10 10 Junction - soldering point Rth JS ≤ 210 q For general AF applications q High collector current q High current gain q Complementary types: BCV 27, BCV 47 (NPN) 5.91 |
Similar Part No. - BCV26 |
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Similar Description - BCV26 |
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