Document Number: 89177

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Revision: 09-Dec-09

3

VT10200C, VFT10200C, VBT10200C, VIT10200C

Vishay General Semiconductor

New Product

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Device

Instantaneous Forward Voltage (V)

0

0.2

0.4

0.8

1.2

1.6

100

10

0.1

0.6

1.0

1

1.4

T

T

T

T

20

30

40

50

60

70

80

90

100

Percent of Rated Peak Reverse Voltage (%)

0.1

0.01

0.001

0.0001

10

1

T

T

T

T

1000

0.1

1

10

100

Reverse Voltage (V)

10

100

T

f = 1.0 MHz

V

10

1

0.01

0.1

1

10

100

t - Pulse Duration (s)

V(B,I)T10200C

Junction to Case

VFT10200C