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BCR108S Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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BCR108S Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
3 / 4 page Semiconductor Group 3 Nov-26-1996 BCR 108S DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration) 10 -1 10 0 10 1 mA I C 0 10 1 10 2 10 3 10 - h FE Collector-Emitter Saturation Voltage VCEsat = f(IC), hFE = 20 0.0 0.1 0.2 0.3 V 0.5 V CEsat 0 10 1 10 2 10 mA I C Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration) 10 -1 10 0 10 1 V V i(on) -1 10 0 10 1 10 2 10 mA I C Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1.0 V i(off) -3 10 -2 10 -1 10 0 10 1 10 mA I C |
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