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BCP70M Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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BCP70M Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
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BCP 70M Semiconductor Group Jun-05-1998 2 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Unit Values typ. min. max. DC Characteristics V V(BR)CEO - - 32 Collector-emitter breakdown voltage IC = 100 µA, IB = 0 V(BR)CBO Collector-base breakdown voltage IC = 100 µA, IB = 0 - - 32 5 - - V(BR)EBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 ICBO - - 100 nA Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C ICBO - - 20 µA Emitter cutoff current VEB = 4 V, IC = 0 IEBO - - 100 nA DC current gain 1) IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 2 A, VCE = 2 V - 475 - - - - - hFE 25 85 50 Collector-emitter saturation voltage1) IC = 2 A, IB = 0.2 A V - VCEsat - 0.18 Base-emitter saturation voltage 1) IC = 2 A, IB = 0.2 A - 1.2 VBEsat - AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz fT - 100 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 80 - pF 1) Pulse test: t < 300 µs; D < 2% Semiconductor Group 2 1998-11-01 |
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