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BCP54MBCP56M Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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BCP54MBCP56M Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
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BCP 54M ... BCP 56M 2 Au -11-1998 Semiconductor Group Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Unit Values typ. max. min. DC Characteristics V(BR)CEO 45 60 80 - - - - - - V BCP 54M BCP 55M BCP 56M Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCP 54M BCP 55M BCP 56M V(BR)CBO 45 60 100 Collector-base breakdown voltage IC = 100 µA, IB = 0 - - - - - - - Emitter-base breakdown voltage IE = 10 µA, IC = 0 - 5 V(BR)EBO nA Collector cutoff current VCB = 30 V, IE = 0 100 ICBO - - µA Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C 20 - - ICBO - DC current gain 1) IC = 5 mA, VCE = 2 V - hFE - 25 - 250 hFE DC current gain 1) IC = 150 mA, VCE = 2 V 40 - - - hFE 25 DC current gain 1) IC = 500 mA, VCE = 2 V - V 0.5 - - VCEsat Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter voltage 1) IC = 500 mA, VCE = 2 V VBE(ON) - - 1 AC Characteristics MHz Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz - 100 fT - 1) Pulse test: t ≤ 300µs, D = 2% Semiconductor Group 2 1998-11-01 |
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