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BCP54MBCP56M Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BCP54MBCP56M
Description  NPN Silicon AF Transistors (For AF driver and output stages High collector current)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BCP54MBCP56M Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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BCP 54M ... BCP 56M
2
Au -11-1998
Semiconductor Group
Electrical Characteristics at
TA = 25°C, unless otherwise specified.
Parameter
Symbol
Unit
Values
typ.
max.
min.
DC Characteristics
V(BR)CEO
45
60
80
-
-
-
-
-
-
V
BCP 54M
BCP 55M
BCP 56M
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCP 54M
BCP 55M
BCP 56M
V(BR)CBO
45
60
100
Collector-base breakdown voltage
IC = 100 µA, IB = 0
-
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
-
5
V(BR)EBO
nA
Collector cutoff current
VCB = 30 V, IE = 0
100
ICBO
-
-
µA
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
20
-
-
ICBO
-
DC current gain 1)
IC = 5 mA, VCE = 2 V
-
hFE
-
25
-
250
hFE
DC current gain 1)
IC = 150 mA, VCE = 2 V
40
-
-
-
hFE
25
DC current gain 1)
IC = 500 mA, VCE = 2 V
-
V
0.5
-
-
VCEsat
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
Base-emitter voltage 1)
IC = 500 mA, VCE = 2 V
VBE(ON)
-
-
1
AC Characteristics
MHz
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
-
100
fT
-
1) Pulse test: t
≤ 300µs, D = 2%
Semiconductor Group
2
1998-11-01


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