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BCP51-BCP53 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BCP51-BCP53
Description  PNP Silicon AF Transistors (For AF driver and output stages High collector current)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BCP51-BCP53 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

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Semiconductor Group
3
BCP 51
... BCP 53
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC current gain1)
IC = 5 mA, VCE = 2 V
IC = 150 mA, VCE = 2 V
BCP 51/BCP 52/BCP 53
BCP 51/BCP 52/BCP 53-10
BCP 51/BCP 52/BCP 53-16
IC = 500 mA, VCE = 2 V
V
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCP 51
BCP 52
BCP 53
V(BR)CE0
45
60
80
nA
µA
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
ICB0
100
20
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
IC = 100
µA, IB = 0
BCP 51
BCP 52
BCP 53
V(BR)CB0
45
60
100
Emitter-base breakdown voltage
IE = 10
µA, IC = 0
V(BR)EB0
5––
V
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat
0.5
hFE
25
40
63
100
25
100
160
250
160
250
Base-emitter voltage1)
IC = 500 mA, VCE = 2 V
VBE
––1
µA
Emitter-base cutoff current
VEB = 5 V, IC = 0
IEB0
––10
MHz
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
fT
125
AC characteristics
1)
Pulse test conditions: t
300 µs, D = 2 %.


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