Document Number: 81646

www.vishay.com

Rev. 1.5, 26-Apr-11

3

This document is subject to change without notice.

VO14642AT, VO14642AABTR

1 Form A Solid State Relay

Vishay Semiconductors

Note

• The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the

temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of

PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's thermal

characteristics of optocouplers application note.

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluations. Typical values are for information only and are not part of the testing requirements.

THERMAL CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Maximum LED junction temperature

at 25 °C

125

°C

Maximum output die junction temperature

at 25 °C

125

°C

Thermal resistance, junction emitter to board

at 25 °C



EB

176

°C/W

Thermal resistance, junction emitter to case

at 25 °C



EC

208

°C/W

Thermal resistance, junction detector to board

at 25 °C



DB

67

°C/W

Thermal resistance, junction detector to case

at 25 °C



DC

134

°C/W

Thermal resistance, junction emitter to junction detector

at 25 °C



ED

310

°C/W

Thermal resistance, case to ambient

at 25 °C



CA

2180

°C/W

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

LED forward current, switch turn-on

0.5

2

mA

LED forward current, switch turn-off

50

μA

LED reverse current

10

μA

LED forward voltage

11.3

1.5

V

OUTPUT

On-resistance (AC/DC)

0.18

0.25



On-resistance (DC only)

0.05

0.07



Off-state leakage current

1μA

T

A

θ

CA

T

C

T

JD

T

JE

T

B

θ

EC

θ

EB

θ

DC

θ

DB

θ

BA

θ

DE

T

A

19996

Package