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BC875 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BC875
Description  NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BC875 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

   
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Semiconductor Group
1
NPN Silicon Darlington Transistors
BC 875
… BC 879
5.91
Maximum Ratings
Type
Ordering Code
Marking
Package1)
Pin Configuration
BC 875
BC 877
BC 879
C62702-C853
C62702-C854
C62702-C855
TO-92
E
C
B
1
2
3
1)
For detailed information see chapter Package Outlines.
2)
If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm
× 10 mm large copper area for
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
3)
Mounted on Al heat sink 15 mm
× 25 mm × 0.5 mm.
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
V
Peak collector current
ICM
Collector current
IC
A
Junction temperature
Tj
˚C
Total power dissipation, TC = 90 ˚C2)
Ptot
W
Storage temperature range
Tstg
Collector-base voltage
VCB0
Thermal Resistance
Junction - ambient2)
Rth JA
156
K/W
1
2
0.8 (1)
150
– 65 … + 150
Emitter-base voltage
VEB0
Base current
IB
mA
100
45
60
60
80
BC 875
BC 877
Peak base current
IBM
200
80
100
BC 879
5
Junction - case3)
Rth JC
75
q
High current gain
q
Low collector-emitter saturation voltage
q
Complementary types: BC 876, BC 878
BC 880 (PNP)


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